FORMATION KINETICS OF PBZRXTI1-XO3 THIN-FILMS

被引：71

作者：

KWOK, CK ^{[1
]}

DESU, SB ^{[1
]}

机构：

[1] VIRGINIA POLYTECH INST & STATE UNIV,DEPT MAT SCI & ENGN,BLACKSBURG,VA 24061

来源：

JOURNAL OF MATERIALS RESEARCH | 1994年 / 9卷 / 07期

关键词：

D O I：

10.1557/JMR.1994.1728

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The pyrochlore to perovskite transition in sputtered PZT thin films has been studied using SEM and XRD. The films were annealed in the temperature range between 350-degrees-C and 750-degrees-C, and the transition temperature for pyrochlore to perovskite transition was found to be around 525-degrees-C. Isothermal annealing was used to study the nucleation and growth kinetics of the perovskite phase. The results showed a linear growth rate for the perovskite phase, thereby indicating an interface controlled process. Also, the growth was found to be isotropic in two dimensions parallel to the plane of the substrate. The nucleation of the perovskite phase was found to be random. The effective activation energy of the perovskite transition was found to be 494 kJ/mol using Avrami's approach.

引用

页码：1728 / 1733

页数：6

共 24 条

[1] SPUTTER-DEPOSITION OF [111]-AXIS ORIENTED RHOMBOHEDRAL PZT FILMS AND THEIR DIELECTRIC, FERROELECTRIC AND PYROELECTRIC PROPERTIES [J].

ADACHI, M ;

MATSUZAKI, T ;

YAMADA, T ;

SHIOSAKI, T ;

KAWABATA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (04) :550-553

[2]

[Anonymous], 1975, EQUILIBRIUM GEN KINE

[3] A COMPARATIVE-STUDY OF FRINGE CONTRAST IN ALPHA-PHASE AND PBO-2ND PHASE PARTICLES IN PB0.88LA0.08(ZR0.70TI0.30)O3 [J].

BABAKISHI, KZ ;

RANDALL, CA .

FERROELECTRICS, 1989, 93 :329-334

[4]

Burke J., 1965, KINETICS PHASE TRANS

[5]

CARRANO J, IEDM, V89, P255

[6] DEPOSITION OF THIN-FILMS OF PZT BY A FOCUSED ION-BEAM SPUTTERING TECHNIQUE [J].

CASTELLANO, RN .

FERROELECTRICS, 1980, 28 (1-4) :387-390

[7]

CHEN KC, 1990, MATER RES SOC SYMP P, V180, P663, DOI 10.1557/PROC-180-663

[8]

Cullity Bd, 1956, ELEMENTS XRAY DIFFRA, P261

[9] INTEGRATED SOL-GEL PZT THIN-FILMS ON PT, SI, AND GAAS FOR NONVOLATILE MEMORY APPLICATIONS [J].

DEY, SK ;

ZULEEG, R .

FERROELECTRICS, 1990, 108 :37-46

[10]

DORMANS G, 1992, MATER RES SOC S P, V243

← 1 2 3 →