SNAP-BACK - A STABLE REGENERATIVE BREAKDOWN MODE OF MOS DEVICES

被引:22
作者
OCHOA, A [1 ]
SEXTON, FW [1 ]
WROBEL, TF [1 ]
HASH, GL [1 ]
SOKEL, RJ [1 ]
机构
[1] INMOS CORP,COLORADO SPRINGS,CO
关键词
D O I
10.1109/TNS.1983.4333094
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4127 / 4130
页数:4
相关论文
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MULLER, W ;
RISCH, L ;
SCHUTZ, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1778-1784
[2]  
SUN E, 1979, BREAKDOWN MECHANISM, P478
[3]   ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS [J].
TOYABE, T ;
ASAI, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :453-461