HIGH-SPEED INP/GAINAS PHOTODIODE ON SAPPHIRE SUBSTRATE

被引：15

作者：

SCHUMACHER, H

GMITTER, TJ

LEBLANC, HP

BHAT, R

YABLONOVITCH, E

KOZA, MA

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 24期

关键词：

D O I：

10.1049/el:19891108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1653 / 1654

页数：2

共 9 条

[1]

BISCHOFF JC, 1988, 18TH P EUR SOL STAT, P329

[2] LOW-NOISE 8 GHZ PIN FET OPTICAL RECEIVER [J].

GIMLETT, JL .

ELECTRONICS LETTERS, 1987, 23 (06) :281-283

[3] HIGH-SPEED GAAS-ON-INP LONG WAVELENGTH TRANSMITTER OEICS [J].

LO, YH ;

CANEAU, C ;

BHAT, R ;

FLOREZ, LT ;

CHANG, GK ;

HARBISON, JP ;

LEE, TP .

ELECTRONICS LETTERS, 1989, 25 (10) :666-668

[4] 1.2 GBIT/S, 52.5KM OPTICAL FIBER TRANSMISSION EXPERIMENT USING OEICS ON GAAS-ON-INP HETEROSTRUCTURE [J].

SUZAKI, T ;

FUJITA, S ;

INOMOTO, Y ;

TERAKADO, T ;

KASAHARA, K ;

ASANO, K ;

TORIKAI, T ;

ITOH, T ;

SHIKADA, M ;

SUZUKI, A .

ELECTRONICS LETTERS, 1988, 24 (20) :1283-1284

[5] MESFET LIFT-OFF FROM GAAS SUBSTRATE TO GLASS HOST [J].

VANHOOF, C ;

DERAEDT, W ;

VANROSSUM, M ;

BORGHS, G .

ELECTRONICS LETTERS, 1989, 25 (02) :136-137

[6] REGROWTH OF GAAS QUANTUM WELLS ON GAAS LIFTOFF FILMS VANDERWAALS BONDED TO SILICON SUBSTRATES [J].

YABLONOVITCH, E ;

KASH, K ;

GMITTER, TJ ;

FLOREZ, LT ;

HARBISON, JP ;

COLAS, E .

ELECTRONICS LETTERS, 1989, 25 (02) :171-171

[7]

Yablonovitch E., 1989, IEEE Photonics Technology Letters, V1, P41, DOI 10.1109/68.91003

[8] EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS [J].

YABLONOVITCH, E ;

GMITTER, T ;

HARBISON, JP ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2222-2224

[9]

YIAN A, 1989, IN PRESS IEEE PH NOV

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