STROBOSCOPIC TESTING OF LSIS WITH LOW-VOLTAGE SCANNING ELECTRON-MICROSCOPE

被引:10
作者
TODOKORO, H
YONEDA, S
YAMAGUCHI, K
FUKUHARA, S
KOMODA, T
机构
来源
JOURNAL OF MICROSCOPY-OXFORD | 1985年 / 140卷
关键词
D O I
10.1111/j.1365-2818.1985.tb02685.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
引用
收藏
页码:313 / 322
页数:10
相关论文
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[2]  
KEERY WJ, 1976, SCANNING ELECTRON MI, V1, P507
[3]  
MENZEL E, 1979, SCANNING ELECTRON MI, V1, P297
[4]   MEASUREMENTS OF DEEP PENETRATION OF LOW-ENERGY ELECTRONS INTO METAL-OXIDE-SEMICONDUCTOR STRUCTURE [J].
NAKAMAE, K ;
FUJIOKA, H ;
URA, K .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1306-1308
[5]  
NAKAMURA H, 1983, SCANNING ELECTRON MI, V3, P1187
[6]  
TODOKORO H, 1981, J ELECTRON MICROSC, V30, P107
[7]  
TODOKORO H, 1980, 38TH P ANN EMSA M, P70
[8]  
TODOKORO H, 1983, SCANNING ELECTRON MI, V2, P561