MEASUREMENTS OF DEEP PENETRATION OF LOW-ENERGY ELECTRONS INTO METAL-OXIDE-SEMICONDUCTOR STRUCTURE

被引：31

作者：

NAKAMAE, K

FUJIOKA, H

URA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.329756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1306 / 1308

页数：3

共 17 条

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