MEASUREMENTS OF DEEP PENETRATION OF LOW-ENERGY ELECTRONS INTO METAL-OXIDE-SEMICONDUCTOR STRUCTURE

被引：31

作者：

NAKAMAE, K

FUJIOKA, H

URA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.329756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1306 / 1308

页数：3

共 17 条

[11] SOME OBSERVATIONS ON CHARGE BUILDUP AND RELEASE IN SILICON DIOXIDE IRRADIATED WITH LOW ENERGY ELECTRONS [J].

SIMONS, M ;

MONTEITH, LK ;

HAUSER, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :966-+

[12] LEAKAGE CURRENT PHENOMENA IN IRRADIATED SOS DEVICES [J].

SROUR, JR ;

OTHMER, S ;

CHEN, SC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2119-2127

[13] BACKSCATTERING OF KILOVOLT ELECTRONS FROM SOLIDS [J].

STERNGLASS, EJ .

PHYSICAL REVIEW, 1954, 95 (02) :345-358

[14] ELECTRON-BEAM IRRADIATION EFFECTS IN THICK OXIDE MOS CAPACITORS [J].

THOMAS, AG ;

BUTLER, SR ;

GOLDSTEIN, JI ;

PARRY, PD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (04) :14-19

[15] RANGE OF LOW-ENERGY ELECTRONS IN SOLIDS [J].

TUNG, CJ ;

ASHLEY, JC ;

RITCHIE, RH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :4874-4878

[16] PENETRATION OF ELECTRONS IN ALUMINUM OXIDE FILMS [J].

YOUNG, JR .

PHYSICAL REVIEW, 1956, 103 (02) :292-293

[17]

[No title captured]

← 1 2 →