ELECTRON-BEAM IRRADIATION EFFECTS IN THICK OXIDE MOS CAPACITORS

被引:12
作者
THOMAS, AG
BUTLER, SR
GOLDSTEIN, JI
PARRY, PD
机构
[1] WESTERN ELECT CO INC, KANSAS CITY WORKS, LEES SUMMIT, MO 64063 USA
[2] LEHIGH UNIV, MAT RES CTR, BETHLEHEM, PA 18015 USA
[3] WESTERN ELECT ENGN RES CTR, PRINCETON, NJ 08540 USA
关键词
D O I
10.1109/TNS.1974.6499261
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:14 / 19
页数:6
相关论文
共 19 条
[1]  
ANDERSEN CA, 1966, ELECTRON MICROPROBE
[2]   EXPOSURE OF PHOTORESISTS - ELECTRON BEAM EXPOSURE OF NEGATIVE PHOTORESISTS [J].
BROYDE, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) :1241-&
[3]  
COLBY JW, PRIVATE COMMUNICATIO
[4]   DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].
EVERHART, TE ;
HOFF, PH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&
[5]   PHOTOEMISSION OF HOLES FROM SILICON INTO SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1966, 152 (02) :780-&
[6]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7]   ELECTRON RESISTS FOR MICROCIRCUIT AND MASK PRODUCTION [J].
HATZAKIS, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1033-&
[8]  
MATSUKAWA T, 1973, APR P WORKSH EL SPEC, P277
[9]  
MITCHELL JP, 1967, BELL SYST TECH J, V46, P1
[10]   ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].
NICOLLIA.EH ;
BERGLUND, CN ;
SCHMIDT, PF ;
ANDREWS, JM .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5654-&