DETECTION OF CDS(TE) AND ZNSE(TE) SCINTILLATION LIGHT WITH SILICON PHOTODIODES

被引：36

作者：

SCHOTANUS, P

DORENBOS, P

RYZHIKOV, VD

机构：

[1] DELFT UNIV TECHNOL, DEPT APPL PHYS, RADIAT TECHNOL GRP, 2629 JB DELFT, NETHERLANDS

[2] KHARKOV SINGLE CRYSTALS INST, KHARKOV 310141, UKRAINE, USSR

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 04期

关键词：

D O I：

10.1109/23.159663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some scintillation characteristics of CdS(Te) have been investigated. The scintillation emission spectrum of CdS(Te) single crystals is situated in a band between 560 and 800 nm with maximum at 640 nm. The light yield of this red emitting crystal on a mus time scale is rather large: approximately 1.7.10(4) photons per MeV of absorbed gamma-ray energy. The scintillation light can be efficiently detected with silicon photodiodes; results are presented. Main decay time components of 270 ns and 3.0 mus were measured. The scintillation mechanism and the application of the material is discussed. Also some data regarding a similar system, ZnSe(Te), are presented.

引用

页码：546 / 550

页数：5

共 13 条

[1]

Akhekyan A. M., 1986, Soviet Physics - Solid State, V28, P1865

[2] MEASUREMENT OF TIME DEPENDENCE OF SCINTILLATION INTENSITY BY A DELAYED-COINCIDENCE METHOD [J].