RADIATION-DAMAGE STUDIES OF AMORPHOUS-SILICON PHOTODIODE SENSORS FOR APPLICATIONS IN RADIOTHERAPY X-RAY-IMAGING

被引：20

作者：

ANTONUK, LE

BOUDRY, J

YORKSTON, J

WILD, CF

LONGO, MJ

STREET, RA

机构：

[1] UNIV MICHIGAN,DEPT PHYS,ANN ARBOR,MI 48109

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[3] UNIV PITTSBURGH,DEPT RADIAT ONCOL,PITTSBURGH,PA 15260

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 299卷 / 1-3期

基金：

美国国家卫生研究院;

关键词：

D O I：

10.1016/0168-9002(90)90764-W

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The high radiation tolerance of hydrogenated amorphous silicon (a-Si:H) is one reason it has become a candidate for high-energy physics applications and for radiotherapy and diagnostic imaging. The performance of 1-mu-m and 5-mu-m a-Si:H n-i-p photodiode sensors used in conjunction with Lanex (Gd2O2S:Tb) intensifying screens has been measured as a function of high-energy photon dose. Over the course of irradiation with a Co-60 source to a total dose of approximately 10(4) Gy the output signal due to the sensor-screen combinations experienced maximum variations of -1.3% and +2.7% for the 1-mu-m sensors, respectively. Transient effects associated with the sensors and screens are also reported.

引用

页码：143 / 146

页数：4

共 10 条

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