THE EFFECT OF GAMMA-IRRADIATION ON AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS

被引:25
作者
FRENCH, ID [1 ]
SNELL, AJ [1 ]
LECOMBER, PG [1 ]
STEPHEN, JH [1 ]
机构
[1] AERE,HARWELL OX11 0RA,OXON,ENGLAND
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 31卷 / 01期
关键词
D O I
10.1007/BF00617183
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:19 / 22
页数:4
相关论文
共 10 条
  • [1] A HARDENED FIELD INSULATOR
    HU, GJ
    AITKEN, JM
    DENNARD, RH
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4102 - 4104
  • [2] APPLICATIONS OF A-SI FIELD-EFFECT TRANSISTORS IN LIQUID-CRYSTAL DISPLAYS AND IN INTEGRATED-LOGIC CIRCUITS
    LECOMBER, PG
    SNELL, AJ
    MACKENZIE, KD
    SPEAR, WE
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 423 - 432
  • [3] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION
    LECOMBER, PG
    SPEAR, WE
    GHAITH, A
    [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181
  • [4] LONG DM, 1980, IEEE T NUCL SCI, V27, P1674
  • [5] MITCHELL JP, 1967, IEEE T ED, V14, P765
  • [6] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, P549
  • [7] THE EFFECT OF GATE OXIDE THICKNESS ON THE RADIATION HARDNESS OF SILICON-GATE CMOS
    NORDSTROM, TV
    GIBBON, CF
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4349 - 4353
  • [8] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN INTEGRATED-CIRCUITS
    SNELL, AJ
    SPEAR, WE
    LECOMBER, PG
    MACKENZIE, K
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (02): : 83 - 86
  • [9] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS
    SNELL, AJ
    MACKENZIE, KD
    SPEAR, WE
    LECOMBER, PG
    HUGHES, AJ
    [J]. APPLIED PHYSICS, 1981, 24 (04): : 357 - 362
  • [10] AMORPHOUS-SILICON TFT ARRAY FOR LCD ADDRESSING
    STROOMER, MVC
    POWELL, MJ
    EASTON, BC
    CHAPMAN, JA
    [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 858 - 859