A HARDENED FIELD INSULATOR

[1] ADAM JR, 1975, IEEE T NUCL SCI, V23, P1604

[2] RADIATION HARDENED FIELD OXIDE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2099 - 2101

[3] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[4] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[5] ELECTRONIC RECOVERY FROM RADIATION EFFECTS IN CMNOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 126 - &

[6] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[7] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[8] RADIATION HARDENING OF THERMAL OXIDES ON SILICON VIA ION IMPLANTATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 203 - +

[9] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[10] IMPORTANT CONSIDERATIONS FOR SEM TOTAL DOSE TESTING [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2066 - 2070

[1] ADAM JR, 1975, IEEE T NUCL SCI, V23, P1604

[2] RADIATION HARDENED FIELD OXIDE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2099 - 2101

[3] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[4] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[5] ELECTRONIC RECOVERY FROM RADIATION EFFECTS IN CMNOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 126 - &

[6] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[7] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[8] RADIATION HARDENING OF THERMAL OXIDES ON SILICON VIA ION IMPLANTATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 203 - +

[9] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[10] IMPORTANT CONSIDERATIONS FOR SEM TOTAL DOSE TESTING [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2066 - 2070