RADIATION HARDENING OF THERMAL OXIDES ON SILICON VIA ION IMPLANTATION

被引：6

作者：

DONOVAN, RP

SIMONS, M

MONTEITH, LK

机构：

[1] Research Triangle Institute, Research Triangle Park, N. C

[2] North Carolina State University, Raleigh, N. C

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1969年 / NS16卷 / 06期

关键词：

D O I：

10.1109/TNS.1969.4325527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Implantation of thermal oxide on silicon with 16 + -2 10 N2 cm at an energy of 50 keV reduces the space charge buildup observed in the oxide when exposed subsequently to ionizing radiation. The component of radiation-induced charge buildup in the oxide attributable to the increase in fast surface states at the oxide-silicon interface is largely unaffected. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：203 / +

页数：1

共 7 条

[1] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[2] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[3] RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES
MITCHELL, JP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 764 - +
[4] RADIATION EFFECTS IN MODIFIED OXIDE INSULATORS IN MOS STRUCTURES
PERKINS, CW
AUBUCHON, KG
DILL, HG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) : 176 - +
[5] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES
SNOW, EH
GROVE, AS
FITZGERALD, DJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1168 - +
[6] ZAININGER KH, 1966, APPL PHYS LETTERS, V8
[7] ZAININGER KH, 1966, FIELD EFFECT TRANSIS, P17

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