RADIATION EFFECTS IN MODIFIED OXIDE INSULATORS IN MOS STRUCTURES

[1] PROCESS TECHNIQUES AND RADIATION EFFECTS IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 276 - &

[2] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06): : 894 - +

[3] RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 764 - +

[4] EFFECT OF ELECTRON RADIATION ON SILICON NITRIDE INSULATED GATE FIELD EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 293 - &

[5] RADIATION EFFECTS IN METAL-INSULATOR-SEMICONDUCTOR CAPACITORS AS DETERMINED FROM CONDUCTANCE MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 153 - +

[6] RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1968, 12 (11) : 385 - +

[7] AUTOMATIC PLOTTING OF CONDUCTANCE AND CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES OR ANY 2 TERMINAL COMPLEX ADMITTANCE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (09) : 1195 - +

[8] A MODEL FOR SHIFTS IN GATE TURN-ON VOLTAGE OF INSULATED-GATE FIELD-EFFECT DEVICES INDUCED BY IONIZING RADIATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 134 - +

[9] PHOTOCURRENT, SPACE-CHARGE BUILDUP, AND FIELD EMISSION IN ALKALI HALIDE CRYSTALS [J]. PHYSICAL REVIEW, 1953, 91 (03): : 568 - 579

[10] ZAININGER KH, 1967, RCA REV, V28, P208

[1] PROCESS TECHNIQUES AND RADIATION EFFECTS IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 276 - &

[2] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06): : 894 - +

[3] RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 764 - +

[4] EFFECT OF ELECTRON RADIATION ON SILICON NITRIDE INSULATED GATE FIELD EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 293 - &

[5] RADIATION EFFECTS IN METAL-INSULATOR-SEMICONDUCTOR CAPACITORS AS DETERMINED FROM CONDUCTANCE MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 153 - +

[6] RADIATION EFFECTS AND ELECTRICAL STABILITY OF METAL-NITRIDE-OXIDE-SILICON STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1968, 12 (11) : 385 - +

[7] AUTOMATIC PLOTTING OF CONDUCTANCE AND CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES OR ANY 2 TERMINAL COMPLEX ADMITTANCE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (09) : 1195 - +

[8] A MODEL FOR SHIFTS IN GATE TURN-ON VOLTAGE OF INSULATED-GATE FIELD-EFFECT DEVICES INDUCED BY IONIZING RADIATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 134 - +

[9] PHOTOCURRENT, SPACE-CHARGE BUILDUP, AND FIELD EMISSION IN ALKALI HALIDE CRYSTALS [J]. PHYSICAL REVIEW, 1953, 91 (03): : 568 - 579

[10] ZAININGER KH, 1967, RCA REV, V28, P208