Cross-sectional Raman microscopy of MeV implanted diamond

被引：43

作者：

Jamieson, DN ^{[1
]}

Prawer, S ^{[1
]}

Nugent, KW ^{[1
]}

Dooley, SP ^{[1
]}

机构：

[1] UNIV MELBOURNE, SCH PHYS, PARKVILLE, VIC 3052, AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 106卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(96)80036-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The defect structures created in diamond by MeV He ion implantation are studied using Raman microscopy. The diamond was irradiated edge on, and the micro-Raman spectra were collected in a direction perpendicular to the implantation direction. This 'cross-sectional' geometry allowed the Raman spectrum of the damage to be resolved as a function of depth from the ion implanted surface. Both the position and the FWHM of the first order Raman mode at 1332 cm(-1) were found to scale linearly with dose; a result readily interpretable as defect induced strain in the implanted layer. The measurements thus provide the depth profile of ion implanted damage in MeV irradiated diamond, and allow a direct test of the accuracy of theoretical models, such as TRIM, for the assessment of damage in ion irradiated diamond.

引用

页码：641 / 645

页数：5