SYNTHESIS AND GROWTH-PROCESSES FOR ZINC GERMANIUM DIPHOSPHIDE

被引：9

作者：

BLISS, DF ^{[1
]}

HARRIS, M ^{[1
]}

HORRIGAN, J ^{[1
]}

HIGGINS, WM ^{[1
]}

ARMINGTON, AF ^{[1
]}

ADAMSKI, JA ^{[1
]}

机构：

[1] PARKE MATH LABS INC,CARLISLE,MA 01741

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 137卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)91263-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Zinc germanium diphosphide (ZnGeP2) has useful properties for wavelength conversion devices in the mid-infrared (IR) spectral range. It has a high figure of merit as an optical parametric oscillator (OPO) and it also performs efficiently as a frequency doubler. Present crystal growth technology has been restricted to small volume charges because of the pressure limits of quartz containment vessels. The authors discuss a new approach to synthesis based on direct injection of phosphorus through a B2O3 encapsulant and reaction with the zinc germanium melt, resulting in synthesis of a large melt (350 g) of ZnGeP2. When crystallization is followed by cooling the congruent melt down through the alpha-beta transition temperature (952-degrees-C) as is typical for bulk growth processes, the result is the growth of partially disordered material. An alternative approach for the growth of ZnGeP2 below the phase transition temperature by chemical vapor transport (CVT) is discussed. The results of crystal growth below the alpha-beta phase transition temperature are reported.

引用

页码：145 / 149

页数：5