HIGH-REMAINING DRY-DEVELOPED RESIST PATTERNS OF STEEP PROFILE

被引：10

作者：

TSUDA, M ^{[1
]}

YOKOTA, A ^{[1
]}

KASHIWAGI, K ^{[1
]}

YABUTA, M ^{[1
]}

OIKAWA, S ^{[1
]}

KANAI, W ^{[1
]}

NAKANE, H ^{[1
]}

机构：

[1] TOKYO OHKA KOGYO CO LTD,SAMUKAWA,KANAGAWA 25301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.1215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1215 / 1220

页数：6

共 10 条

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[2] DRY ETCHING DURABILITY OF POSITIVE ELECTRON RESISTS
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[J]. JOURNAL OF APPLIED POLYMER SCIENCE, 1981, 26 (10) : 3395 - 3408
[3] JENKINS AD, 1972, POLYM SCI, V1, P243
[4] MIFUNE T, 1978, NIKKEI ELECTRON, V190, P81
[5] PLASMA-DEVELOPED X-RAY RESISTS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2665 - 2674
[6] TSUDA M, 1979, PHOTOGR SCI ENG, V23, P290
[7] NOVEL PLASMA DEVELOPABLE RESIST COMPOSITIONS AND PERFORMANCE OF TOTAL DRY MICROFABRICATIONS IN SUB-MICRON LITHOGRAPHY
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OIKAWA, S
KANAI, W
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NUINO, K
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UEHARA, A
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1351 - 1357
[8] TSUDA M, 1983, POLYM ENG SCI, V23
[9] TSUDA M, 1982, 6TH P PHOT C ELL, P397
[10] TSUDA M, 1976, ACS S SERIES, V25, P423