COMPENSATION MECHANISMS IN N+-GAAS DOPED WITH SULFUR

被引：6

作者：

VENKATASUBRAMANIAN, R

GHANDHI, SK

KUECH, TF

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECTR COMP & SYST ENGN,TROY,NY 12180

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(89)90584-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：827 / 832

页数：6

共 16 条

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[9] METAL-CARBON BONDS .3. THE PYROLYSES OF TRIMETHYL BISMUTH, TRIMETHYL ANTIMONY AND DIMETHYL TIN DICHLORIDE [J].

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