POSITRON IMPLANTATION PROFILE IN NICKEL

被引：25

作者：

HANSEN, HE

LINDEROTH, S

PETERSEN, K

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1007/BF00632435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：99 / 103

页数：5

共 23 条

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[9] POSITRON-ANNIHILATION IN GE-S GLASSES [J].

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