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ISOELECTRONIC DOUBLE DOPING EFFECT ON DISLOCATION DENSITY OF INP SINGLE-CRYSTAL
被引:11
作者
:
TOHNO, S
论文数:
0
引用数:
0
h-index:
0
TOHNO, S
KUBOTA, E
论文数:
0
引用数:
0
h-index:
0
KUBOTA, E
SHINOYAMA, S
论文数:
0
引用数:
0
h-index:
0
SHINOYAMA, S
KATSUI, A
论文数:
0
引用数:
0
h-index:
0
KATSUI, A
UEMURA, C
论文数:
0
引用数:
0
h-index:
0
UEMURA, C
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1984年
/ 23卷
/ 02期
关键词
:
D O I
:
10.1143/JJAP.23.L72
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L72 / L74
页数:3
相关论文
共 4 条
[1]
DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING
[J].
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
JACOB, G
;
DUSEAUX, M
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
DUSEAUX, M
;
FARGES, JP
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
FARGES, JP
;
VANDENBOOM, MMB
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
VANDENBOOM, MMB
;
ROKSNOER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
ROKSNOER, PJ
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(02)
:417
-424
[2]
JACOB G, 1982, SEMIINSULATING 3 5 M, P2
[3]
IMPURITY EFFECT ON GROWN-IN DISLOCATION DENSITY OF INP AND GAAS CRYSTALS
[J].
SEKI, Y
论文数:
0
引用数:
0
h-index:
0
SEKI, Y
;
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
WATANABE, H
;
MATSUI, J
论文数:
0
引用数:
0
h-index:
0
MATSUI, J
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(02)
:822
-828
[4]
X-RAY TOPOGRAPHIC OBSERVATION OF DISLOCATION GENERATION AND PROPAGATION IN INP SINGLE-CRYSTAL GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE
[J].
TOHNO, S
论文数:
0
引用数:
0
h-index:
0
TOHNO, S
;
SHINOYAMA, S
论文数:
0
引用数:
0
h-index:
0
SHINOYAMA, S
;
YAMAMOTO, A
论文数:
0
引用数:
0
h-index:
0
YAMAMOTO, A
;
UEMURA, C
论文数:
0
引用数:
0
h-index:
0
UEMURA, C
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(02)
:666
-672
←
1
→
共 4 条
[1]
DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING
[J].
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
JACOB, G
;
DUSEAUX, M
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
DUSEAUX, M
;
FARGES, JP
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
FARGES, JP
;
VANDENBOOM, MMB
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
VANDENBOOM, MMB
;
ROKSNOER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
ROKSNOER, PJ
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(02)
:417
-424
[2]
JACOB G, 1982, SEMIINSULATING 3 5 M, P2
[3]
IMPURITY EFFECT ON GROWN-IN DISLOCATION DENSITY OF INP AND GAAS CRYSTALS
[J].
SEKI, Y
论文数:
0
引用数:
0
h-index:
0
SEKI, Y
;
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
WATANABE, H
;
MATSUI, J
论文数:
0
引用数:
0
h-index:
0
MATSUI, J
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(02)
:822
-828
[4]
X-RAY TOPOGRAPHIC OBSERVATION OF DISLOCATION GENERATION AND PROPAGATION IN INP SINGLE-CRYSTAL GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE
[J].
TOHNO, S
论文数:
0
引用数:
0
h-index:
0
TOHNO, S
;
SHINOYAMA, S
论文数:
0
引用数:
0
h-index:
0
SHINOYAMA, S
;
YAMAMOTO, A
论文数:
0
引用数:
0
h-index:
0
YAMAMOTO, A
;
UEMURA, C
论文数:
0
引用数:
0
h-index:
0
UEMURA, C
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(02)
:666
-672
←
1
→