ISOELECTRONIC DOUBLE DOPING EFFECT ON DISLOCATION DENSITY OF INP SINGLE-CRYSTAL

被引:11
作者
TOHNO, S
KUBOTA, E
SHINOYAMA, S
KATSUI, A
UEMURA, C
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期
关键词
D O I
10.1143/JJAP.23.L72
中图分类号
O59 [应用物理学];
学科分类号
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页码:L72 / L74
页数:3
相关论文
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[4]   X-RAY TOPOGRAPHIC OBSERVATION OF DISLOCATION GENERATION AND PROPAGATION IN INP SINGLE-CRYSTAL GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J].
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