ELECTRICAL-PROPERTIES AND CRYSTAL-STRUCTURE OF (BA0.5SR0.5)TIO3 THIN-FILMS PREPARED ON PT/SIO2/SI BY RF MAGNETRON SPUTTERING

被引：62

作者：

LEE, WJ ^{[1
]}

PARK, IK ^{[1
]}

JANG, GE ^{[1
]}

KIM, HG ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,ELECTR CERAM MAT RES CTR,YUSONG GU,TAEJON,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 01期

关键词：

RF MAGNETRON SPUTTERING; BST FILM; PREFERRED ORIENTATION; PT/SIO2/SI; ELECTRICAL PROPERTY; DIELECTRIC CONSTANT; LEAKAGE CURRENT DENSITY; HOPPING CONDUCTION;

D O I：

10.1143/JJAP.34.196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(Ba0.5Sr0.(5))TiO3 (BST) thin films have been prepared on Pt/SiO2/Si substrates under various Ar/O-2 plasma conditions by the conventional rf magnetron sputtering method using a ceramic target containing excess BaO and SrO. With increasing deposition temperature, the crystallinity of the BST films abruptly increased and change of the preferred orientation was observed. At 650 degrees C, (100)-preferred orientation was obtained. The increase of the crystallinity of films improved the dielectric constant. A 100 nm BST thin film deposited at 650 degrees C with 50% O-2 plasma content has a dielectric constant of 725 and a leakage,current density of 2.3 x 10(-7) A/cm(2) at 2.5 V. In the current-voltage curve of BST film deposited at higher substrate temperature, lower leakage current density in the low bias region and narrower flat region (hopping conduction region) were obtained.

引用

页码：196 / 199

页数：4