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HIGH-SPEED N-A1GAAS-P-GAAS ELECTROLUMINESCENT DIODES
被引:8
作者
:
HEINEN, J
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,D-8000 MUNICH,FED REP GER
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,D-8000 MUNICH,FED REP GER
HEINEN, J
[
1
]
HARTH, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,D-8000 MUNICH,FED REP GER
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,D-8000 MUNICH,FED REP GER
HARTH, W
[
1
]
机构
:
[1]
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,D-8000 MUNICH,FED REP GER
来源
:
ELECTRONICS LETTERS
|
1975年
/ 11卷
/ 21期
关键词
:
D O I
:
10.1049/el:19750395
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:512 / 513
页数:2
相关论文
共 6 条
[1]
ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ACKET, GA
NIJMAN, W
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
NIJMAN, W
LAM, HT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
LAM, HT
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3033
-
3040
[2]
ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843
[3]
DIRECT-MODULATION EFFICIENCY OF LEDS FOR OPTICAL FIBER TRANSMISSION APPLICATIONS
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BURRUS, CA
LEE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
LEE, TP
HOLDEN, WS
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
HOLDEN, WS
[J].
PROCEEDINGS OF THE IEEE,
1975,
63
(02)
: 329
-
331
[4]
VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
CASEY, HC
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
MILLER, BI
PINKAS, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
PINKAS, E
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(03)
: 1281
-
1287
[5]
Ennaceur A., 1971, OPT COMMUN, V31, P47, DOI [DOI 10.1016/0030-4018(71)90157-X, 10.1016/0166-4328(88)90157-x]
[6]
INFLUENCE OF ACTIVE-LAYER WIDTH ON PERFORMANCE OF HOMOJUNCTION AND SINGLE-HETEROJUNCTION GAAS LIGHT-EMITTING DIODES
HARTH, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
HARTH, W
HEINEN, J
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
HEINEN, J
HUBER, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
HUBER, W
[J].
ELECTRONICS LETTERS,
1975,
11
(01)
: 23
-
24
←
1
→
共 6 条
[1]
ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ACKET, GA
NIJMAN, W
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
NIJMAN, W
LAM, HT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
LAM, HT
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3033
-
3040
[2]
ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843
[3]
DIRECT-MODULATION EFFICIENCY OF LEDS FOR OPTICAL FIBER TRANSMISSION APPLICATIONS
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BURRUS, CA
LEE, TP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
LEE, TP
HOLDEN, WS
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
HOLDEN, WS
[J].
PROCEEDINGS OF THE IEEE,
1975,
63
(02)
: 329
-
331
[4]
VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
CASEY, HC
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
MILLER, BI
PINKAS, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
PINKAS, E
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(03)
: 1281
-
1287
[5]
Ennaceur A., 1971, OPT COMMUN, V31, P47, DOI [DOI 10.1016/0030-4018(71)90157-X, 10.1016/0166-4328(88)90157-x]
[6]
INFLUENCE OF ACTIVE-LAYER WIDTH ON PERFORMANCE OF HOMOJUNCTION AND SINGLE-HETEROJUNCTION GAAS LIGHT-EMITTING DIODES
HARTH, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
HARTH, W
HEINEN, J
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
HEINEN, J
HUBER, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH,ARCIS STR 21,8 MUNICH 2,FED REP GER
HUBER, W
[J].
ELECTRONICS LETTERS,
1975,
11
(01)
: 23
-
24
←
1
→