TRAPPED RADIATION IN INJECTION-LASERS

被引：10

作者：

GRIBKOVSKII, VP

KONONENKO, VK

RYABTSEV, GI

SAMOILYUKOVICH, VA

机构：

[1] ACAD SCI BESSR,PHYS INST,MINSK,BESSR

[2] BELORUSSIAN POLYTECH INST,PHYS DEPT,MINSK,BESSR

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1976年 / 12卷 / 06期

关键词：

D O I：

10.1109/JQE.1976.1069170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：322 / 326

页数：5

共 19 条

[1]

DANILOVA TN, 1966, FIZ TVERD TELA, V8, P2462

[2] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

DYMENT, JC ;

NORTH, JC ;

MILLER, BI ;

RIPPER, JE ;

DASARO, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&

[3] RADIATION TRAPPING IN LASER-DIODES [J].

ETTENBERG, M ;

LOCKWOOD, HF ;

SOMMERS, HS .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5047-5051

[4]

Gribkovskii V. P., 1973, Zhurnal Prikladnoi Spektroskopii, V18, P140

[5] The Internal Parameters of Injection Lasers [J].

Gribkovskii, V. P. ;

Kononenko, V. K. ;

Samoilyukovich, V. A. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (02) :353-363

[6]

Gribkovskii V. P., 1969, Zhurnal Prikladnoi Spektroskopii, V11, P170

[7]

GRIBKOVSKII VP, 1968, DOKL AKAD NAUK SSSR+, V183, P67

[8]

GRIBKOVSKII VP, 1975, NAUKI TEKHNIKA

[9]

GRIBKOVSKII VP, 1971, KVANTOVAYA ELECTRONI, P285

[10]

KARNAUKHOV VG, 1967, FIZ TEKH POLUPROV, V1, P1362

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