RADIATION TRAPPING IN LASER-DIODES

被引：18

作者：

ETTENBERG, M ^{[1
]}

LOCKWOOD, HF ^{[1
]}

SOMMERS, HS ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.1661068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5047 / 5051

页数：5

共 10 条

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[9] FAR-FIELD PATTERN OF ELECTRON-BOMBARDED SEMICONDUCTOR LASERS [J].

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[10] A TECHNIQUE FOR PREPARATION OF LOW-THRESHOLD ROOM-TEMPERATURE GAAS LASER DIODE STRUCTURES [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) :210-&

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