KRF EXCIMER LASER IRRADIATION EFFECT ON GAAS ATOMIC LAYER EPITAXY

被引：9

作者：

ISHIKAWA, H

KAWAKYU, Y

SASAKI, M

MASHITA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 12期

关键词：

D O I：

10.1143/JJAP.28.L2327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2327 / L2329

页数：3

共 9 条

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[2]

AOYAGI Y, 1977, FUJITSU SCI TECHNOL, V13, P53

[3] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J].

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TISCHLER, MA ;

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ELMASRY, NA .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :51-53

[4]

DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[5] GAAS ATOMIC LAYER EPITAXY USING THE KRF EXCIMER LASER [J].

KAWAKYU, Y ;

ISHIKAWA, H ;

SASAKI, M ;

MASHITA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1439-L1441

[6] GAAS GROWTH BY ATOMIC LAYER EPITAXY USING DIETHYLGALLIUMCHLORIDE [J].

MORI, K ;

YOSHIDA, M ;

USUI, A ;

TERAO, H .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :27-29

[7] MOLECULAR LAYER EPITAXY [J].

NISHIZAWA, J ;

ABE, H ;

KURABAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1197-1200

[8]

NISHIZAWA J, 1986, J VAC SCI TECHNOL A, V4, P706, DOI 10.1116/1.573838

[9] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM [J].

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N ;

KODAMA, K .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1509-1511

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