DISTRIBUTION OF THE QUANTIZED HALL POTENTIAL IN GAAS-ALXGA1-XAS HETEROSTRUCTURES

被引：83

作者：

ZHENG, HZ ^{[1
]}

TSUI, DC ^{[1
]}

CHANG, AM ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.32.5506

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5506 / 5509

页数：4

相关论文

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[9] LOCALIZATION AND THE QUANTIZED HALL RESISTANCE IN THE TWO-DIMENSIONAL ELECTRON-GAS
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[J]. PHYSICAL REVIEW B, 1981, 24 (07): : 4082 - 4082
[10] RESISTANCE STANDARD USING QUANTIZATION OF THE HALL RESISTANCE OF GAAS-ALXGA1-XAS HETEROSTRUCTURES
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