THE STRETCHING MODES OF THE SI-H AND GE-H BONDS IN AMORPHOUS AND CRYSTALLINE GE AND SI

被引：21

作者：

RICHTER, H ^{[1
]}

TRODAHL, J ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90551-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：181 / 184

页数：4

共 10 条

[1] BRODSKY M, 1976, PHYS REV B, V13, P787
[2] CARDONA M, PHYS STAT SOL B
[3] HYDROGEN VIBRATION ON SI(111)7X7 - EVIDENCE FOR A UNIQUE CHEMISORPTION SITE
CHABAL, YJ
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (23) : 1850 - 1853
[4] HIGH-RESOLUTION INFRARED STUDY OF HYDROGEN CHEMISORBED ON SI(100)
CHABAL, YJ
CHABAN, EE
CHRISTMAN, SB
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1983, 29 (JAN) : 35 - 40
[5] SI-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H-2 ATMOSPHERE
HIRAKI, A
IMURA, T
MOGI, K
TASHIRO, M
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 277 - 280
[6] DISSENT FROM THE DIHYDRIDE MODEL OF THE VIBRATIONAL-SPECTRA OF AMORPHOUS SILICON-HYDROGEN ALLOYS
PAUL, W
[J]. SOLID STATE COMMUNICATIONS, 1980, 34 (05) : 283 - 285
[7] OPTICAL-PROPERTIES AND TRANSPORT IN MICROCRYSTALLINE SILICON PREPARED AT TEMPERATURES BELOW 400-DEGREES-C
RICHTER, H
LEY, L
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7281 - 7286
[8] RICHTER H, 1982, THESIS U STUTTGART
[9] MODELS FOR THE HYDROGEN-RELATED DEFECT IMPURITY COMPLEXES AND SI-H INFRARED BANDS IN CRYSTALLINE SILICON
SHI, TS
SAHU, SN
OEHRLEIN, GS
HIRAKI, A
CORBETT, JW
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01): : 329 - 341
[10] PROPERTIES OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL-TRANSPORT IN HYDROGEN PLASMA AT TEMPERATURES BETWEEN 80-DEGREES-C AND 400-DEGREES-C
VEPREK, S
IQBAL, Z
OSWALD, HR
WEBB, AP
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (03): : 295 - 308

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