FORMATION OF DISLOCATIONS AND OTHER TYPES OF EXTENDED DEFECTS BY ION-IMPLANTATION

被引：3

作者：

AULEYTNER, J

MORAWIEC, J

机构：

[1] Institute of Physics, Polish Academy of Sciences, Warsaw

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is shown which kinds of extended defects can be created by fast heavy ions in matter and particularly in dislocation-free silicon crystals as a model material. X-ray and TEM methods are applied.

引用

页码：403 / 408

页数：6

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