IMPACT IONIZATION IN SILICON DIOXIDE AT FIELDS IN BREAKDOWN RANGE

[1] BASSLER H, 1969, Z ANGEW PHYSIK, V27, P321

[2] BASSLER H, 1971, Z NATURFORSCH PT A, VA 26, P814

[3] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[4] THICKNESS INFLUENCE IN BREAKDOWN PHENOMENA OF THIN DIELECTRIC FILMS [J]. PHYSICA STATUS SOLIDI, 1964, 4 (02): : 311 - 324

[5] FRANZ W, 1952, ANN PHYS-BERLIN, V11, P17

[6] Frohlich H., 1939, REP PROG PHYS, V6, P411, DOI [10.1088/0034-4885/6/1/326, DOI 10.1088/0034-4885/6/1/326]

[7] HIPPEL AV, 1935, ERGEB EXAKTEN NATURW, V14, P79

[8] KADARY V, 1974, THESIS TECHNION

[9] THEORY OF LOCALIZED ELECTRONIC BREAKDOWN IN INSULATING FILMS [J]. ADVANCES IN PHYSICS, 1972, 21 (92) : 605 - +

[10] ELECTRICAL PULSE BREAKDOWN OF SILICON OXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2728 - +

[1] BASSLER H, 1969, Z ANGEW PHYSIK, V27, P321

[2] BASSLER H, 1971, Z NATURFORSCH PT A, VA 26, P814

[3] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[4] THICKNESS INFLUENCE IN BREAKDOWN PHENOMENA OF THIN DIELECTRIC FILMS [J]. PHYSICA STATUS SOLIDI, 1964, 4 (02): : 311 - 324

[5] FRANZ W, 1952, ANN PHYS-BERLIN, V11, P17

[6] Frohlich H., 1939, REP PROG PHYS, V6, P411, DOI [10.1088/0034-4885/6/1/326, DOI 10.1088/0034-4885/6/1/326]

[7] HIPPEL AV, 1935, ERGEB EXAKTEN NATURW, V14, P79

[8] KADARY V, 1974, THESIS TECHNION

[9] THEORY OF LOCALIZED ELECTRONIC BREAKDOWN IN INSULATING FILMS [J]. ADVANCES IN PHYSICS, 1972, 21 (92) : 605 - +

[10] ELECTRICAL PULSE BREAKDOWN OF SILICON OXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2728 - +