BARRIER PROPERTY DEPENDENCE OF BAND NONPARABOLICITY EFFECTS IN A QUANTUM-WELL

被引：4

作者：

KIM, BW

CHARLSON, EM

机构：

[1] Department of Electrical and Computer Engineering, University of Missouri at Columbia, Columbia

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 02期

关键词：

D O I：

10.1063/1.357797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The barrier material property dependence of band nonparabolicity effects on the discrete energy levels of a GaAs/AlxGa1-xAs quantum-well structure is reported. Results from the modified resonant tunneling method show clear barrier property dependence. The model includes the position-dependent nonparabolicity parameters from which energy-dependent effective mass is calculated. This model can be applied to any shape potential barrier. Both a rectangular quantum well and a parabolic quantum well were analyzed and these results are compared to those from previously reported calculations.

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页码：1334 / 1336

页数：3

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