HIGH-RESOLUTION POSITRON EMISSION TOMOGRAPHY USING SMALL BISMUTH-GERMANATE CRYSTALS AND INDIVIDUAL PHOTOSENSORS

被引：34

作者：

DERENZO, SE ^{[1
]}

BUDINGER, TF ^{[1
]}

VULETICH, T ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DONNER LAB,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 01期

关键词：

D O I：

10.1109/TNS.1983.4332351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：665 / 670

页数：6

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