ENHANCEMENT-MODE PSEUDOMORPHIC INVERTED HEMT FOR LOW-NOISE AMPLIFIER

被引：13

作者：

OHMURO, K ^{[1
]}

FUJISHIRO, HI ^{[1
]}

ITOH, M ^{[1
]}

NAKAMURA, H ^{[1
]}

NISHI, S ^{[1
]}

机构：

[1] OKI ELECT IND CO LTD,SEMICOND TECHNOL LAB,TOKYO 193,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 12期

关键词：

D O I：

10.1109/22.106538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characteristics of pseudomorphic inverted HEMT (P-I-HEMT) are compared with that of pseudomorphic HEMT. Both devices were fabricated in enhancement-mode by the same process. P-I-HEMT shows higher maximum transconductance of 590 mS/mm, and higher K-value of 600 mS/Vmm at threshold voltage of 0 V, and good pinch-off characteristics than its counterpart. Noise characteristics of P-I-HEMT are reported for the first time in this paper. Lower noise figure (1.0 dB at 18 GHz) was obtained in P-I-HEMT. It is concluded that the P-I-HEMT structure is suitable for fine gate low noise FET's. Furthermore, P-I-HEMT shows far better noise characteristics than the other at low drain voltage and current.

引用

页码：1995 / 2000

页数：6

共 6 条

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[2]

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[4]

ITOH M, 1989, 21ST C SOL STAT DEV, P285

[5]

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2438-L2441

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