LASER-ANNEALED REFRACTORY-METAL SILICIDE FILMS ON GAAS

被引：3

作者：

ANDERSON, WT

CHRISTOU, A

THOMPSON, PE

GOSSETT, CR

ERIDON, JM

HATZOPOULOS, Z

EFTHIMIOPOULOS, T

KUDUMAS, M

MICHELAKIS, C

MORGAN, DV

机构：

[1] RES CTR CRETE,HERAKLION,GREECE

[2] UNIV WALES COLL CARDIFF,CARDIFF CF1 3YH,WALES

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 01期

关键词：

Annealing; FETs; GaAs; Semiconductor devices and materials;

D O I：

10.1049/el:19900041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method of depositing refractory metal silicide films was developed for both Schottky barriers and ohmic contacts to GaAs devices. Pulsed excimer laser annealing of the films was used to lower the gate sheet resistances and in the case of ohmic contacts to remove the interface barrier. Rutherford backscattering analysis showed that interdiffusion induced by laser annealing was reduced with In-doped GaAs compared to undoped GaAs substrates. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：62 / 64

页数：3