INFLUENCE OF THE WAVELENGTH OF INCIDENT LIGHT ON SHUNT CONDUCTANCE AND FILL FACTOR IN AMORPHOUS-SILICON SOLAR-CELLS

被引：6

作者：

MARUSKA, HP

MOUSTAKAS, TD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 05期

关键词：

D O I：

10.1109/T-ED.1984.21568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：551 / 558

页数：8

共 12 条

[1]

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[3] ON THE CARRIER COLLECTION EFFICIENCY OF AMORPHOUS-SILICON HYDRIDE SCHOTTKY-BARRIER SOLAR-CELLS - EFFECTS OF RECOMBINATION [J].

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[4]

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MOUSTAKAS, TD .

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[6] EFFECTS OF POWER AND HYDROGEN IN THE DISCHARGE ON THE PHOTO-VOLTAIC PROPERTIES OF SPUTTERED AMORPHOUS-SILICON [J].

MOUSTAKAS, TD ;

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[7] EFFECT OF PHOSPHORUS AND BORON IMPURITIES ON AMORPHOUS-SILICON SOLAR-CELLS [J].

MOUSTAKAS, TD ;

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[8] PHOTO-VOLTAIC PROPERTIES OF REACTIVELY SPUTTERED A-SIHX FILMS [J].

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[9] AMORPHOUS-SILICON P-I-N SOLAR-CELLS FABRICATED BY REACTIVE SPUTTERING [J].

MOUSTAKAS, TD ;

FRIEDMAN, R .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :515-517

[10] ELECTRON-HOLE RECOMBINATION IN REACTIVELY SPUTTERED AMORPHOUS-SILICON SOLAR-CELLS [J].

MOUSTAKAS, TD ;

WRONSKI, CR ;

TIEDJE, T .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :721-723

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