STRIP-LOADED SEMICONDUCTOR RING LASERS EMPLOYING MULTIMODE INTERFERENCE OUTPUT COUPLERS

被引：15

作者：

KRAUSS, T ^{[1
]}

DELARUE, RM ^{[1
]}

GONTIJO, I ^{[1
]}

LAYBOURN, PJR ^{[1
]}

ROBERTS, JS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期

关键词：

D O I：

10.1063/1.111446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strip-loaded semiconductor ring lasers were successfully fabricated in the GaAs/AlGaAs material system. The radius was 400 mum and a 2 X 2 3 dB multimode interference coupler 320 mum long was used to extract the output signal. Devices operated continuous wave at 140 mA threshold current with a differential quantum efficiency of 7% per output, which we believe is the highest value reported to date for lasers of this type.

引用

页码：2788 / 2790

页数：3

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