AUGER COEFFICIENT OF GAP(ZN,O) .2. EVALUATION FROM TEMPERATURE-DEPENDENCE OF LUMINESCENCE EFFICIENCY

被引：6

作者：

NEUMARK, GF ^{[1
]}

DEBITETTO, DJ ^{[1
]}

BHARGAVA, RN ^{[1
]}

HARNACK, PM ^{[1
]}

机构：

[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.15.3156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3156 / 3162

页数：7

共 15 条

[1] ONE-DIMENSIONAL OVERLAP FUNCTIONS AND THEIR APPLICATION TO AUGER RECOMBINATION IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1295) :486-495

[2] TIME DECAY AND TEMPERATURE DEPENDENCE OF RADIATIVE RECOMBINATION IN (ZN, O)-DOPED GAP [J].

BHARGAVA, RN .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3698-+

[3] RECOMBINATION KINETICS OF ELECTRONS AND HOLES AT ISOELECTRONIC IMPURITIES - GAP(ZN,O) [J].

DISHMAN, JM ;

DIDOMENI.M .

PHYSICAL REVIEW B, 1970, 1 (08) :3381-&

[4] LUMINESCENCE AND MINORITY CARRIER RECOMBINATION IN P-TYPE GAP(ZN,O) [J].

DISHMAN, JM ;

DIDOMENI.M ;

CARUSO, R .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1988-+

[5] SIMPLIFIED ANALYSIS OF ELECTRON-HOLE RECOMBINATION IN ZN-DOPED AND O-DOPED GAP [J].

HENRY, CH ;

BACHRACH, RZ ;

SCHUMAKER, NE .

PHYSICAL REVIEW B, 1973, 8 (10) :4761-4767

[6] RESPONSE-TIME MEASUREMENTS OF EXCITON AND PAIR RADIATIVE RECOMBINATION ASSOCIATED WITH ZN-O ISOELECTRONIC COMPLEX IN GAP,4 TO 100 DEGREES K [J].

JAYSON, JS ;

BACHRACH, RZ .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :477-&

[7] LUMINESCENT TIME DECAY OF EXCITONS BOUND TO ZN-O COMPLEXES IN GAP [J].

JAYSON, JS ;

BHARGAVA, RN ;

DIXON, RW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) :4972-+

[8] ENERGIES OF S EIGENSTATES IN A STATIC SCREENED COULOMB POTENTIAL [J].

LAM, CS ;

VARSHNI, YP .

PHYSICAL REVIEW A, 1971, 4 (05) :1875-&

[9] AUGER RECOMBINATION + IMPACT IONIZATION INVOLVING TRAPS IN SEMICONDUCTORS [J].

LANDSBERG, PT ;

LAL, P ;

RHYSROBERTS, C .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5426) :915-&

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

← 1 2 →