IMPURITY EFFECTS IN ELECTRON-HOLE DROPLETS

被引：24

作者：

SMITH, DL ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 05期

关键词：

D O I：

10.1016/0038-1098(76)91500-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：637 / 639

页数：3

共 10 条

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[6]

HAMMOND RA, TO BE PUBLISHED

[7]

HOLLAND MG, 1962, P INT C PHYS SEMICON, P479

[8] EFFECTS OF DOPING ON CONDENSED ELECTRON-HOLE STATE IN GERMANIUM AND SILICON [J].

MARTIN, RW ;

SAUER, R .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 62 (02) :443-452

[9]

Novikov B. V., 1973, Soviet Physics - Solid State, V15, P326

[10] CHARGE ON AN ELECTRON-HOLE DROP [J].

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PHYSICAL REVIEW B, 1974, 9 (04) :1540-1546

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