HIGH-SPEED HIGH-POWER 1.06 MUM GALLIUM-INDIUM-ARSENIDE LIGHT-EMITTING DIODES

被引：6

作者：

MABBITT, AW ^{[1
]}

MOBSBY, CD ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,CASWELL,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

关键词：

D O I：

10.1049/el:19750120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：157 / 158

页数：2

共 9 条

[1] BACHMAN KJ, 1974, 5 P INT S GAAS DEAUV
[2] CLAWSON AR, 1975, TECHNICAL DIGEST TOP
[3] ENSTROM RE, 1971, GALLIUM ARSENIDE REL, P30
[4] FRENCH WG, 1974, BELL SYST TECH J, V53, P951, DOI 10.1002/j.1538-7305.1974.tb02778.x
[5] GOODFELLOW R, TO BE PUBLISHED
[6] ULTIMATE LOWER LIMIT OF ATTENUATION IN GLASS OPTICAL WAVEGUIDES
KECK, DB
MAURER, RD
SCHULTZ, PC
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (07) : 307 - 309
[7] NUESE CJ, 1972, IEEE T ED, P1067
[8] PAYNE DN, 1975, TECHNICAL DIGEST TOP
[9] EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LPE FROM SN SOLUTIONS
SHAY, JL
BACHMANN, KJ
BUEHLER, E
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (04) : 192 - 194