HIGH-EFFICIENCY GAAS/GE MONOLITHIC TANDEM SOLAR-CELLS

被引：39

作者：

TOBIN, SP ^{[1
]}

VERNON, SM ^{[1
]}

BAJGAR, C ^{[1
]}

HAVEN, VE ^{[1
]}

GEOFFROY, LM ^{[1
]}

LILLINGTON, DR ^{[1
]}

机构：

[1] SPECTROLAB INC,SYLMAR,CA 91342

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTING GERMANIUM;

D O I：

10.1109/55.708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tandem cells of GaAs grown by metalorganic chemical vapor deposition (MOCVD) on thin Ge to address both higher efficiency and reduced weight are discussed. GaAs/Ge monolithic tandem cells of 4-cm**2 area have been produced with independently verified efficiencies up to 21. 7% (AM0, one sun, 25 degree C, total area). Under AM1. 5 global conditions, efficiencies are up to 24. 3%. These are believed to be the highest one-sun efficiencies reported for GaAs/Ge cells, and the highest efficiency for a two-terminal monolithic tandem cell.

引用

页码：256 / 258

页数：3

共 13 条

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