MOLECULAR-BEAM EPITAXIAL GAAS HETEROFACE SOLAR-CELL GROWN ON GE

被引：31

作者：

MILLER, DL

HARRIS, JS

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 12期

关键词：

D O I：

10.1063/1.91889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1104 / 1106

页数：3

共 9 条

[1] GALLIUM-ARSENIDE FILMS ON RECRYSTALLIZED GERMANIUM FILMS [J].

CHU, SS ;

CHU, TL ;

MONROE, S ;

WANG, CP ;

YANG, HT .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4848-4849

[2]

FAN JCC, 1979, APPL PHYS LETT, V35, P875, DOI 10.1063/1.90990

[3] EFFICIENT SHALLOW-HOMOJUNCTION GAAS SOLAR-CELLS BY MOLECULAR-BEAM EPITAXY [J].

FAN, JCC ;

CALAWA, AR ;

CHAPMAN, RL ;

TURNER, GW .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :804-806

[4]

JAGER H, 1978, J APPL PHYS, V49, P3317, DOI 10.1063/1.325284

[5] ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J].

KROEMER, H ;

POLASKO, KJ ;

WRIGHT, SC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :763-765

[6]

Lamorte M. F., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P874

[7] HIGH-EFFICIENCY ALGAAS-GAAS CONCENTRATOR SOLAR-CELLS [J].

SAHAI, R ;

EDWALL, DD ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1979, 34 (02) :147-149

[8]

SAHAI R, 1977, 12TH P IEEE PHOT SPE

[9]

ZEHR SW, 1980, AIME ELECTRONIC MATE

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