BAND-GAP TUNING OF INGAAS/INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION

被引：42

作者：

CHARBONNEAU, S ^{[1
]}

POOLE, PJ ^{[1
]}

FENG, Y ^{[1
]}

AERS, GC ^{[1
]}

DION, M ^{[1
]}

DAVIES, M ^{[1
]}

GOLDBERG, RD ^{[1
]}

MITCHELL, IV ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON,ON N6A 3K7,CANADA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期

关键词：

D O I：

10.1063/1.114823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The technique of ion-induced quantum well intermixing using broad area, high energy (1 MeV P+) ion implantation has been used to tune the emission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW) laser operating at 1.5 mu m. The optical quality of the band-gap shifted material is assessed using low-temperature photoluminescence (PL). The band-gap tuned lasers are characterized in terms of threshold current density and external quantum efficiency and exhibit blue shifts in the lasing spectra of up to 63 nm. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating active as well as passive optoelectronic devices. (C) 1995 American Institute of Physics.

引用

页码：2954 / 2956

页数：3

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