REDUCTION OF THERMALLY GROWN SIO2 BY AL FILMS

被引：16

作者：

GERSHINSKII, AE ^{[1
]}

KHOROMENKO, AA ^{[1
]}

EDELMAN, FL ^{[1
]}

机构：

[1] ACAD SCI USSR, SEMICONDUCTOR PHYS INST, SIBERIAN BRANCH, NOVOSIBIRSK, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 25卷 / 02期

关键词：

D O I：

10.1002/pssa.2210250234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：645 / 651

页数：7

相关论文

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[3] Khoromenko A. A., 1974, Fizika i Khimiya Obrabotki Materialov, P48
[4] FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS
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[5] THIN-FILM STUDIES OF REDUCTION OF SIO2 BY AL
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[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (04) : 177 - 180
[6] REACTION BETWEEN VITREOUS SILICA AND MOLTEN ALUMINUM
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