THE MECHANISM OF FIELD-ASSISTED SILICON GLASS BONDING

被引：57

作者：

KANDA, Y

MATSUDA, K

MURAYAMA, C

SUGAYA, J

机构：

[1] Hamamatsu University School of Medicine, Hamamatsu

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87064-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to evaluate the field-assisted bonding process, reactions during bonding are studied by measurements of current temperature surge and bonding front displacement. The current characteristics are simulated by Wallis's equivalent circuit. From an emissivity calibrated temperature thermography, it is concluded that Joule heating at the interface is not the most important part of displacement of the bonding front. It is also shown that the displacement of the bonding front is a function of the square root of time. This suggests that the bonding is controlled by diffusion. A bonding mechanism is proposed. © 1990.

引用

页码：939 / 943

页数：5

共 18 条

[1]

ANTHONY TR, 1966, J APPL PHYS, V37, P2123

[2] ELECTRON-MICROPROBE STUDY OF FIELD-ASSISTED BONDING OF GLASSES TO METALS [J].