200-DEGREES-C, 96-NM WAVELENGTH RANGE, CONTINUOUS-WAVE LASING FROM UNBONDED GAAS MOVPE-GROWN VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引:43
作者
MORGAN, RA
HIBBSBRENNER, MK
MARTA, TM
WALTERSON, RA
BOUNNAK, S
KALWEIT, EL
LEHMAN, JA
机构
[1] Honeywell Technology Center, Bloomington
关键词
D O I
10.1109/68.384503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report record temperature and wavelength range attained using MOVPE-grown AlGaAs vertical cavity surface-emitting lasers (VCSEL's). Unbonded continuous-wave lasing is achieved at temperatures up to 200 degrees C from these top-emitting VCSEL's and operation over a 96-nm wavelength regime near 850 nm is also achieved from the same nominal design. Temperature and wavelength insensitive operation is also demonstrated; threshold current is controlled to within a factor of 2 (2.5-5 mA) for a wavelength range exceeding 50 nm and to within +/-30% (5-10 mA) for a temperature range of 190 degrees C at 870 nm.
引用
收藏
页码:441 / 443
页数:3
相关论文
共 14 条
[1]   HIGH-TEMPERATURE CW OPERATION OF GAAS/ALGAAS HIGH BARRIER GAIN OFFSET VCSELS [J].
CATCHMARK, JM ;
MORGAN, RA ;
ASOM, MT ;
GUTH, GD ;
MULLALLY, MWFT ;
CHRISTODOULIDES, DN .
ELECTRONICS LETTERS, 1994, 30 (25) :2136-2138
[2]   EXTENDED TEMPERATURE AND WAVELENGTH PERFORMANCE OF VERTICAL-CAVITY TOP SURFACE-EMITTING LASERS [J].
CATCHMARK, JM ;
MORGAN, RA ;
KOJIMA, K ;
LEIBENGUTH, RE ;
ASOM, MT ;
GUTH, GD ;
FOCHT, MW ;
LUTHER, LC ;
PRZYBYLEK, GP ;
MULLALLY, T ;
CHRISTODOULIDES, DN .
APPLIED PHYSICS LETTERS, 1993, 63 (23) :3122-3124
[3]  
HIBBSBRENNER M, 1994, WORKSHOP INTERCONNEC
[4]  
HIBBSBRENNER MK, 1994, POSTDEADLINE P LEOS
[5]  
LEE YH, 1980, ELECTRON LETT, V26, P710
[6]   HIGH-TEMPERATURE PULSED AND CONTINUOUS-WAVE OPERATION AND THERMALLY STABLE THRESHOLD CHARACTERISTICS OF VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
LU, B ;
ZHOU, P ;
CHENG, JL ;
MALLOY, KJ ;
ZOLPER, JC .
APPLIED PHYSICS LETTERS, 1994, 65 (11) :1337-1339
[7]   TRANSVERSE-MODE CONTROL OF VERTICAL-CAVITY TOP-SURFACE-EMITTING LASERS [J].
MORGAN, RA ;
GUTH, GD ;
FOCHT, MW ;
ASOM, MT ;
KOJIMA, K ;
ROGERS, LE ;
CALLIS, SE .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (04) :374-377
[8]  
MORGAN RA, 1991, SPIE P 1992, P149
[9]  
MORGAN RA, 1995, IN PRSS SPIE OE LASE, V2398
[10]  
MORGAN RA, 1993, SPIE MINIATURE MICRO, V1992, P64