MOCVD OF ALN ON SILICON

被引：11

作者：

EICHHORN, G

RENSCH, U

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 69卷 / 01期

关键词：

D O I：

10.1002/pssa.2210690146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K3 / K6

页数：4

共 13 条

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[8]

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[9] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J].

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[10] ACOUSTIC SURFACE-WAVE PROPERTIES OF EPITAXIALLY GROWN ALUMINUM NITRIDE AND GALLIUM NITRIDE ON SAPPHIRE [J].

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