SURFACE-IRREGULARITY-ENHANCED SUBBAND RESONANCE OF SEMICONDUCTORS .1. GENERAL-THEORY

被引：13

作者：

NEE, TW

机构：

[1] NATL TSINGHUA UNIV,INST PHYS,HSINCHU 300,TAIWAN

[2] TECH UNIV MUNICH,DEPT PHYS,D-8046 GARCHING,FED REP GER

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.29.3225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3225 / 3238

页数：14

共 17 条

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[10] SURFACE-IRREGULARITY-ENHANCED SUBBAND RESONANCE OF SEMICONDUCTORS .2. NUMERICAL ASPECTS [J].

NEE, TW ;

KOCH, F .

PHYSICAL REVIEW B, 1984, 29 (06) :3239-3251

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