FORMATION OF A THIN SIO2 FILM USING SYNCHROTRON RADIATION EXCITED REACTION

被引：12

作者：

OGAWA, T ^{[1
]}

OCHIAI, I ^{[1
]}

MOCHIJI, K ^{[1
]}

HIRAIWA, A ^{[1
]}

TAKAKUWA, Y ^{[1
]}

NIWANO, M ^{[1
]}

MIYAMOTO, N ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of altering an oxygen-adsorbed Si surface to SiO2 using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO2-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H+ ions, which are emitted from the surface, is also detected during SR irradiation. The Si-O bond formation model followed by H+ PSD explains this oxidation.

引用

页码：794 / 796

页数：3

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