EXCITONIC STATES IN HYDROGENATED AMORPHOUS-SILICON

被引：4

作者：

STUTZMANN, M

BRANDT, MS

机构：

[1] Max-Planck-Institut für Festkörperforschung, W-7000 Stuttgart 80

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 141卷 / 1-3期

关键词：

D O I：

10.1016/S0022-3093(05)80523-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Experimental evidence for the existence of excitonic states in hydrogenated amorphous silicon is reviewed. It is shown that weakly coupled electron-hole pairs can be observed in spin-dependent recombination experiments up to room temperature. Details of the electron-hole interaction are discussed, and the role of excitonic states in the light-induced creation of metastable defects in amorphous silicon is examined.

引用

页码：97 / 105

页数：9

共 22 条

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