SILICIDE AND SCHOTTKY-BARRIER FORMATION IN THE TI-SI AND THE TI-SIOX-SI SYSTEMS

被引：131

作者：

TAUBENBLATT, MA

HELMS, CR

机构：

来源：

关键词：

D O I：

10.1063/1.331551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6308 / 6315

页数：8

共 17 条

[1] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE
BRAICOVICH, L
GARNER, CM
SKEATH, PR
SU, CY
CHYE, PW
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5131 - 5141
[2] PHOTOEMISSION ENERGY-LEVEL MEASUREMENTS OF SORBED GASES ON TITANIUM
EASTMAN, DE
[J]. SOLID STATE COMMUNICATIONS, 1972, 10 (10) : 933 - &
[3] EASTMAN DE, 1971, NBS SPECIAL PUBLICAT, V323, P205
[4] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE
FREEOUF, JL
RUBLOFF, GW
HO, PS
KUAN, TS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 916 - 919
[5] HENRICH VE, 1976, PHYS REV LETT, V36, P1336
[6] HENRICH VE, 1978, PHYS REV B, V17, P4120
[7] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE
IBACH, H
ROWE, JE
[J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718
[8] JOHANSSON LI, 1977, PHYS STATUS SOLIDI B, V83, P77, DOI 10.1002/pssb.2220830107
[9] LO WJ, 1978, SURF SCI, V71, P199
[10] ABSENCE OF BAND-GAP SURFACE-STATES ON CLEAN AMORPHOUS-SILICON
MILLER, JN
LINDAU, I
SPICER, WE
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (02): : 273 - 282