COMMENT ON SLIP IN EPITAXIAL GE-GAAS COMBINATIONS

被引:7
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KRAUSE, GO
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10.1063/1.1656578
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O59 [应用物理学];
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页码:2469 / &
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HOLLOWAY, H ;
BOBB, LC .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2467-&
[2]   MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].
HOLT, DB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) :1053-+
[3]   OBSERVATION OF MISFIT DISLOCATIONS IN GAAS-GE HETEROJUNCTIONS [J].
KRAUSE, GO ;
TEAGUE, EC .
APPLIED PHYSICS LETTERS, 1967, 10 (09) :251-&