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THE ROLE OF FLUORINE IN IMPLANTED AMORPHOUS-SILICON
被引:11
作者
:
WONG, SP
论文数:
0
引用数:
0
h-index:
0
WONG, SP
POON, MC
论文数:
0
引用数:
0
h-index:
0
POON, MC
KWOK, HL
论文数:
0
引用数:
0
h-index:
0
KWOK, HL
LAM, YW
论文数:
0
引用数:
0
h-index:
0
LAM, YW
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1986年
/ 133卷
/ 10期
关键词
:
D O I
:
10.1149/1.2108364
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:2172 / 2177
页数:6
相关论文
共 43 条
[41]
RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+
[J].
TSAI, MY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
TSAI, MY
;
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STREETMAN, BG
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
:183
-187
[42]
RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .2. MIGRATION OF FLUORINE IN BF2+-IMPLANTED SILICON
[J].
TSAI, MY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
TSAI, MY
;
DAY, DS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAY, DS
;
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STREETMAN, BG
;
WILLIAMS, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
WILLIAMS, P
;
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
EVANS, CA
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
:188
-192
[43]
van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1
←
1
2
3
4
5
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共 43 条
[41]
RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+
[J].
TSAI, MY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
TSAI, MY
;
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STREETMAN, BG
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
:183
-187
[42]
RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .2. MIGRATION OF FLUORINE IN BF2+-IMPLANTED SILICON
[J].
TSAI, MY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
TSAI, MY
;
DAY, DS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAY, DS
;
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STREETMAN, BG
;
WILLIAMS, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
WILLIAMS, P
;
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
EVANS, CA
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
:188
-192
[43]
van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1
←
1
2
3
4
5
→